product summary part number bv dss r ds(on) i d irhy7130cm 100v 0.18 w 14.4a irhy8130cm 100v 0.18 w 14.4a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron t olerant n identical pre- and post-electrical t est conditions n avalanche energy rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n electrically isolated n ceramic eyelets absolute maximum ratings parameter irhy7130cm, irhy8130cm units i d @ v gs = 12v, t c = 25c continuous drain current 14.4 i d @ v gs = 12v, t c = 100c continuous drain current 9.1 i dm pulsed drain current ? 58 p d @ t c = 25c max. power dissipation 75 w linear derating f actor 0.6 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 150 mj dv/dt peak diode recovery dv/dt ? 6.0 v/ns t j oper ating junction -55 to 150 t stg storage temper ature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 7.0(typical) g pre-radiation 100volt, 0.18 w w w w w , mega rad hard hexfet international rectifiers rad hard technology hexfets demonstrate virtual immunity to see fail- ure. additionally, under identical pre- and post-radia- tion test conditions, international rectifiers rad hard hexfets retain identical electrical specifica- tions up to 1 x 10 5 rads (si) total dose. no compen- sation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. since the rad hard process utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the indus- try. rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. they are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. o c a preliminary data sheet no. pd - 9.1274c repetitive avalanche and dv/dt rated jansr2n7380 JANSH2N7380 hexfet ? transistor n-channel mega rad hard [ref: mil-prf-19500/614] irhy7130cm irhy8130cm 10/20/97
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices pre-radiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0 v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.11 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.18 v gs = 12v, i d = 9.1a on-state resistance 0.20 w v gs = 12v, i d = 14.4a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward tr ansconductance 2.5 s ( )v ds > 15v, i ds = 14.4a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 14.4a q gs gate-to-source charge 10 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 35 v dd = 50v, i d = 14.4a, t r rise time 75 r g = 7.5 w t d (off) turn-off delay time 70 t f fall time 60 l d internal drain inductance 5.0 l s internal source inductance 15 c iss input capacitance 960 v gs = 0v, v ds = 25v c oss output capacitance 340 pf f = 1.0mhz c rss reverse transfer capacitance 85 na w ? nh ns measured from drain lead, 6mm (0.25 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet symbol show- ing the internal inductances. m a source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 14.4 modified mosfet symbol showing the integral i sm pulse source current (body diode) ? 58 reverse p-n junction rectifier. v sd diode forward voltage 1.8 v t j = 25c, i s = 14.4a, v gs = 0v ? t rr reverse recovery time 275 ns t j = 25c, i f = 14.4a, di/dt 100a/ m s q rr reverse recovery charge 2.5 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.67 k/w ? r thja junction-to-ambient 80 typical socket mount
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source v oltage 80 80 v applied drain-to-source voltage during gamma-dot i pp 100 100 a peak radiation induced photo-current di/dt 800 160 a/sec rate of rise of photo-current l 1 0.1 0.5 h circuit inductance required to limit di/dt table 3. single event effects ? let (si) range v ds bias v gs bias parameter typical units ion (mev/mg/cm 2 ) (m) (v) (v) v ds 100 v ni 28 ~41 100 -5 radiation performance of rad hard hexfets table 1. low dose rate ? ? irhy7130cm irhy8130cm parameter 100k rads (si) 1000k rads (si) units test conditions ? min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds =0.8 x max rating, v gs =0v r ds(on)1 static drain-to-source ? 0.18 0.24 w v gs = 12v, i d = 9.1a on-state resistance one v sd diode forward voltage ? 1.8 1.8 v t c = 25c, i s = 14.4a,v gs = 0v radiation - characteristics international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hard- ness assurance program at international rectifier uses two radiation environments. every manuf acturing lot is tested in a low dose rate (total dose) environment per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per note 6 and a v dss bias condition equal to 80% of the de vice r ated voltage per note 7. pre- and post-radiation limits of the devices irradiated to 1 x 10 5 rads (si) are identi- cal and are presented in table 1, column 1, irhy7130cm. the values in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. it should be noted that at a radiation level of 1 x 10 5 rads (si) no changes in limits are specified in dc parameters. high dose rate testing may be done on a special request basis using a dose rate up to 1 x 10 12 rads (si)/sec. international rectifier radiation hardened hexfets have been characte rized in neutron and heavy ion single event effects (see) environments. single event effects characterization is shown in table 3.
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices pre-radiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 7 9 11 13 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 14.4a
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-radiation 1 10 100 0 500 1000 1500 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 14 a v = 20v ds v = 50v ds v = 80v ds 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices pre-radiation fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) i , drain current (a) c d
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15 v 20v pre-radiation 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.4a 9.1a 14a 12
irhy7130cm, irhy8130cm, jansr-, jansh-, 2n7380 devices pre-radiation ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? v dd = 25v, star ting t j = 25c, e as = [0.5 * l * (i l 2 ) ] peak i l = 14.4a, r g = 25v, l=1.4mh ? i sd 14.4a, di/dt 395a/ m s, v dd bv dss , t j 150c suggested rg = 2.35 w ? pulse width 300 m s; duty cycle 2% ? k/w = c/w w/k = w/c ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-radiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? process characterized by independent laboratory. ? all pre-radiation and post-radiation test conditions are identical to facilitate direct comparison for circuit applications. case outline and dimensions to 257aa world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 10/97 caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. fur ther more, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
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